k·p-based Quantum Transport Simulation of Silicon Nanowire pMOSFETs
نویسندگان
چکیده
We have developed a full quantum transport simulator for p-type Si nanowire field effect transistors based on the k•p Hamiltonian. The NEGF formalism was employed for transport calculation and the self-consistent calculations were performed. We have constructed the Hamiltonian in the modespace, with its size greatly reduced compared to the full Hamiltonian. A computationally demanding problem of having to solve eigenvalue problems for all the cross-section was addressed by devising an approximate but accurate method. We therefore were able to develop an efficient simulator for p-type Si nanowire FETs. In this work, we demonstrate the capability of our simulator by showing the hole transport in Si nanowires of relatively large cross-sections. Keywords-component; k.p; quantum transport; nanowire; Si; MOSFET; device simulation
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